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Asaoka, Hidehito; Yamazaki, Tatsuya; Filimonov, S.*; Shamoto, Shinichi
Proceedings of 14th International Conference on Thin Films (ICTF-14) & Reactive Sputter Deposition 2008 (RSD 2008), p.179 - 182, 2008/11
We report stress evolutions during Bi adsorption on Si(111) 77 and initial stages of Bi-mediated Ge growth on Si(111). Surface stress is determined by using a real-time measurement of the substrate curvature. We find a difference in the surface stress between clean Si(111) 77 surface and Si(111) surface covered with one monolayer of Bi, and an increase in the surface stress accompanied by RHEED intensity oscillation of the specular beam during ideal pseudomorphic Ge layer growth with Bi. For Ge coverage of up to 2 bilayers, the stress evolution shows a clear stress relaxation due to formation of trenches on the Ge surface and injection of misfit dislocations into the Ge/Si interface.
Shimoyama, Iwao; Uddin, M. N.*; Baba, Yuji; Sekiguchi, Tetsuhiro; Nagano, Masamitsu*
no journal, ,
Graphite-like B-C-N hybrids have been expected to control a wide variety of electronic properties from metal to insulator. However, since most B-C-N hybrids have complex structure including various unknown chemical bonding states, the local structures have not been clarified yet. In order to clarify the chemical bonding states of this material, we measured near-edge X-ray absorption fine structure (NEXAFS) of B-C-N hybrid thin films. B-C-N hybrid thin films were synthesized by ion beam deposition of borazine on a graphite substrate, and the composition was controlled by ion fluence. Some * peaks were observed in B and N K-edge NEXAFS spectra, and relative intensities of the peaks depended on ion fluence and polarization. Electronic structures of some model clusters are calculated by a molecular orbital theory, and compared with NEXAFS spectra. From the experimental and theoretical results, we discuss some models of local structures.